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Deep-level defects in red GaAs1-xPxlight-emitting diodes

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2 Author(s)
L. Forbes ; University of Arkansas, Fayetteville, Ark. ; C. K. Vaughn

A wide variety of deep-level recombination centers have been observed at large concentrations in commercially available red GaAsP light-emitting diode p-n junctions. Similar defects have not been observed in GaP diodes. The characteristics, probable cause, and possible effect on luminescence efficiency of these deep-level defect centers are described.

Published in:

Proceedings of the IEEE  (Volume:62 ,  Issue: 4 )