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Study of the frequency response of the multiplication gain of a two-layer avalanche photodiode

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2 Author(s)
B. B. Pal ; University of Calcutta, Calcutta, India ; S. K. Roy

A study of the multiplication gain against frequency has been made for a two-layer avalanche photodiode consisting of an avalanche layer and a drift layer. The analysis shows that as the ratio of the avalanche-layer width to drift-layer width increases (keeping the total depletion-layer width fixed), the multiplication gain increases but the bandwidth of the diode decreases. However, when photons are absorbed in the p-region, i.e., before entering the depletion region, the multiplication gain of the diode remains almost the same while the bandwidth increases as the structure changes from p-i-n to Read type.

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Proceedings of the IEEE  (Volume:62 ,  Issue: 2 )