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A lifetime limitation of high-field GaAs devices

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2 Author(s)
Hartnagel, H. ; Univ. of Newcastle upon Tyne, UK ; Weiss, B.L.

From considerations of the piezoelectric effect it is shown that dislocations are generated by high fields such as those produced by the traveling dipole domain in a Gunn diode. This eventually causes failure of the device. The effects of heat generated in the active layer are shown to aggravate this phenomenon.

Published in:

Proceedings of the IEEE  (Volume:61 ,  Issue: 9 )