High-frequency silicon-on-sapphire IMPATT oscillator

Epitaxially grown silicon-on-sapphire (SOS) monolithic integrated IMPATT oscillators were fabricated and tested. One diode was successfully operated under pulsed conditions yielding 10-mW peak power output at 13.8 GHz. This experiment serves to demonstrate the feasibility of silicon-on-sapphire monolithic integration at microwave frequencies.