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High-frequency silicon-on-sapphire IMPATT oscillator

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3 Author(s)
C. P. Wen ; RCA Corporation, Princeton, N.J. ; Y. S. Chiang ; A. F. Young

Epitaxially grown silicon-on-sapphire (SOS) monolithic integrated IMPATT oscillators were fabricated and tested. One diode was successfully operated under pulsed conditions yielding 10-mW peak power output at 13.8 GHz. This experiment serves to demonstrate the feasibility of silicon-on-sapphire monolithic integration at microwave frequencies.

Published in:

Proceedings of the IEEE  (Volume:61 ,  Issue: 6 )