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Carrier lifetime in semiconductors for steady-state recombination conditions

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1 Author(s)
F. Van de Wiele ; Université Catholique de Louvain, Louvain-la-Neuve, Belgium

An extension of the Shockley-Read expression for steady-state lifetime is proposed for inhomogeneous nondegenerate semiconductors under a nonuniform external generation Gn(Gp) of electrons (holes) and in the presence of current flow. The special case of small disturbances in carrier density for a semiconductor with local electrical neutrality is also considered.

Published in:

Proceedings of the IEEE  (Volume:61 ,  Issue: 6 )