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Integral heat-sink IMPATT diodes fabricated using p+etch stop

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2 Author(s)
Rhee, C.J. ; Central Research Laboratories, Phoenix, Ariz. ; Saltich, J.

The problems in batch fabrication of integral heat-sink IMPATT diodes are greatly simplified through a newly developed preferential etching technique. Devices fabricated utilizing the new technique have thermal resistance (θjc) values of 17-20°C/W for an active area of 2 × 10-4cm2.

Published in:

Proceedings of the IEEE  (Volume:61 ,  Issue: 3 )