Referenced Items are not available for this document.
The computer simulation of a memory device using a Gunn effect diode is described, and its detailed mechanism of operation is demonstrated. The method of computation is based on the relaxation technique to solve Poisson's equation describing the behavior of charges in the diode. The results of simulation prove the possibility of a memory operation of the device.
Published in:
Proceedings of the IEEE
(Volume:60
,
Issue:
6
)
Date of Publication: June 1972
- Page(s):
- 761 - 762
- ISSN :
- 0018-9219
- Digital Object Identifier :
- 10.1109/PROC.1972.8770
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 28 June 2005
- Issue Date :
- June 1972
- Sponsored by :
- IEEE
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