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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:13 Issue:5 Help

Single-transistor-latch-induced degradation of front- and back-channel thin-film SOI transistors

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3 Author(s)
Zhang, B. ; Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA ; Yoshino, A. ; Ma, T.-P.

The front- and back-channel transistor characteristics in thin-film silicon-on-insulator (SOI) MOSFETs have been studied before and after front-channel hot-carrier stress resulting from single-transistor latch. This stress causes the following significant changes: (a) a reduction of the front-channel current for a given gate voltage, (b) an increase in front-channel drain-source breakdown voltage when measured in the reverse mode, and (c) a decrease in the back-channel transconductance. These changes can be attributed to the hot-carrier induced interface traps on both front and back interfaces near the drain junction.<>

Published in:
Electron Device Letters, IEEE  (Volume:13 ,  Issue: 5 )

Date of Publication: May 1992

Page(s):
282 - 284
ISSN :
0741-3106
INSPEC Accession Number:
4175790
Digital Object Identifier :
10.1109/55.145054
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
May 1992
Sponsored by :
IEEE Electron Devices Society

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