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Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFETs

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4 Author(s)
Bunyan, R.J.T. ; DRA Electron Div., Malvern, UK ; Uren, M.J. ; Alderman, J.C. ; Eccleston, W.

The authors report the direct measurement of the silicon island temperature in both long and submicrometer thin-film silicon-on-insulator (SOI) MOSFETs as a function of bias conditions using noise thermometry. They show that the device island temperature increases with drain voltage and that this results in a reduction of drain current. Using standard models of the drain current and velocity/field expression, they show that a thermally induced fall in mobility quantitatively accounts for the loss in drain current drive observed.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 5 )

Date of Publication:

May 1992

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