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A new 'shift and ratio' method for MOSFET channel-length extraction

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9 Author(s)
Y. Taur ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; D. S. Zicherman ; D. R. Lombardi ; P. J. Restle
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A shift-and-ratio method for extracting MOSFET channel length is presented. In this method, channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results. It is shown to yield more accurate and consistent channel lengths for deep-submicrometer CMOS devices at room and low temperatures. It is also found that, for both nFET and pFET, the source-drain resistance is essentially independent of temperature from 300 to 77 K.<>

Published in:

IEEE Electron Device Letters  (Volume:13 ,  Issue: 5 )