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Theory of the maximum charge stored in the thin oxide MNOS memory transistor

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1 Author(s)

The maximum charge stored in the thin oxide metal-nitride-oxide-silicon (MNOS) memory transistor is calculated using a previously developed theory for the oxide current and experimental values for the nitride currents. The calculation is performed for oxide thicknesses of 15-50 Å and for six different nitride deposition temperatures. The theoretical results are shown to agree with recently published experimental data.

Published in:

Proceedings of the IEEE  (Volume:59 ,  Issue: 7 )