By Topic

The reverse anneal of junction characteristics in forming shallow p/sup +/-n junction by BF/sub 2//sup +/ implantation into thin Co films on Si substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Juang, M.H. ; Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Cheng, H.C.

Silicided shallow p/sup +/-n junctions, formed by BF/sub 2//sup +/ implantation into thin Co films on Si substrates and subsequently annealed, showed a reverse anneal of junction characteristics in the temperature range between 550 and 600 degrees C. The reverse anneal means behavior showing degradation of the considered parameters with increasing annealing temperature. A higher implant dosage caused a more distinct reverse anneal. The reverse anneal of electrical characteristics was associated with the reverse anneal of substitutional boron. A shallow p/sup +/-n junction with a leakage current density lower than 3 nA/cm/sub 2/, a forward ideality factor of better than 1.01, and a junction depth of about 0.1 mu m was achieved by just a 550 degrees C anneal.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 4 )