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MOSFET memory circuits

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1 Author(s)
Terman, L.M. ; IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y.

Metal-oxide-semiconductor first effect transistors (MOSFETs) are currently being used in a variety of memory applications. The requirements of memory usage and the characteristics of MOSFET devices and technology have led to a number of unique circuits for these applications. Organization and design considerations of memory systems using MOSFET devices are reviewed, and examples of specific circuits are presented and analyzed. These include random access cells, shift registers, read only storage, and on-chip support circuits; both complementary and noncomplementary circuits are discussed.

Published in:

Proceedings of the IEEE  (Volume:59 ,  Issue: 7 )

Date of Publication:

July 1971

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