Cart (Loading....) | Create Account
Close category search window
 

Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Fang, H. ; Dept. of Electr. Eng. & Comput. Sci.. MIT, Cambridge, MA, USA ; Krisch, K.S. ; Gross, B.J. ; Sodini, C.G.
more authors

Reoxidized nitrided oxide (ROXNOX) gate dielectrics can be used to block the diffusion of boron into the MOS channel region. However, fixed oxide charge annealing can mask the effects of boron in the channel, a particularly important consideration for low-temperature gate oxides. The authors separate the effect of fixed charge annealing from the effect of boron diffusion and demonstrate that a low-temperature furnace-grown reoxidized nitrided oxide has a substantial advantage over conventional gate oxides in protecting the channel from boron over a wide range of annealing times and temperatures. They also address the issue of fixed charge annealing in low-temperature reoxidized nitrided oxides and present an approach to maintain acceptable gate dielectric quality while preserving a low D-t product for integration into a scaled dual-gate CMOS process.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 4 )

Date of Publication:

April 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.