Referenced Items are not available for this document.
A rapid charge-pumping method was used to measure the interface-trap parameters in MOSFETs. The geometric mean of the electron and hole interface-trap capture cross sections decreases significantly (as much as two orders of magnitude) after Fowler-Nordheim (F-N) injection, and gradually recovers toward its original value. This effect is consistent with the interface-trap transformation process observed in MOS capacitors.<
Published in:
Electron Device Letters, IEEE
(Volume:13
,
Issue:
4
)
Date of Publication: April 1992
- Page(s):
- 201 - 202
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4166342
- Digital Object Identifier :
- 10.1109/55.145020
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- April 1992
- Sponsored by :
- IEEE Electron Devices Society
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