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Schottky contact effects in the sidegating effect of GaAs devices

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3 Author(s)
Yi Liu ; Center for Integrated Syst., Stanford Univ., CA, USA ; Dutton, R.W. ; Deal, M.D.

The sidegating effect measurements on ungated FETs verify that the Schottky contact on undoped substrates causes serious current reduction in GaAs devices and high leakage current in the semi-insulating GaAs. By realizing the fact that current in Schottky-i-n structures can be high and taking this effect into account, the observed abrupt changes and S-shaped characteristics of the drain and sidegate currents can be explained to be the consequence of the transition of the substrate current from the n-i-n current to the Schottky-i-n current.<>

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Electron Device Letters, IEEE  (Volume:13 ,  Issue: 3 )