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X-band silicon TRAPATT diodes

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2 Author(s)

Pulsed TRAPATT diodes have been successfully operated in X-band with 20 percent efficiency and 15 W output power. The diodes operate at the first subharmonic of the IMPATT frequency. Similar diodes have yielded 35 percent efficiency at 5.3 GHz as oscillators, and 54 percent efficiency at 3 GHz as RF triggered amplifiers.

Published in:

Proceedings of the IEEE  (Volume:58 ,  Issue: 8 )

Date of Publication:

Aug. 1970

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