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Double-drift-region (p+pnn+) avalanche diode oscillators

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3 Author(s)

The advantages of a double-drift-region avalanche diode oscillator are discussed. Conventional structures (p+nn+or n+pp+) are essentially single-drift-region devices in that transit-time delay (for IMPATT mode) and zone transit (for TRAPATT mode) occur in a single region of one impurity type. The proposed structure (p+pnn+) has two drift regions and is essentially two complementary avalanche diode oscillators in series.

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Proceedings of the IEEE  (Volume:58 ,  Issue: 7 )