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P-channel MOSFET's with ultrathin N/sub 2/O gate oxides

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4 Author(s)
G. Q. Lo ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; W. Ting ; J. Ahn ; D. -L. Kwong

The performance and reliability of p-channel MOSFETs utilizing ultrathin ( approximately 62 AA) gate dielectrics grown in pure N/sub 2/O ambient are reported. Unlike (reoxidized) NH/sub 3/-nitrided oxide devices, p-MOSFETs with N/sub 2/O-grown oxides show improved performance in both linear and saturation regions compared to control devices with gate oxides grown in O/sub 2/. Because both electron and hole trapping are suppressed in N/sub 2/O-grown oxides, the resulting p-MOSFETs show considerably enhanced immunity to channel hot-electron and -hole-induced degradation (e.g., hot-electron-induced punchthrough).<>

Published in:

IEEE Electron Device Letters  (Volume:13 ,  Issue: 2 )