Referenced Items are not available for this document.
A pseudo-MOS transistor can be activated in as-grown silicon-on-insulator (SOI) structures without any device processing by using point-contact probes. The measurement setup for in-situ operation and typical transistor characteristics are presented. Parameters are extracted which relate to minority and majority carriers, buried oxide, and the Si-SiO/sub 2/ interface.<
Published in:
Electron Device Letters, IEEE
(Volume:13
,
Issue:
2
)
Date of Publication: Feb. 1992
- Page(s):
- 102 - 104
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4129747
- Digital Object Identifier :
- 10.1109/55.144972
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb. 1992
- Sponsored by :
- IEEE Electron Devices Society
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