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High-frequency MOST structures

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1 Author(s)

By doping the substrate of a MOST more heavily near the Si-SiO2interface than in the bulk of the semiconductor, an improvement in the transconductance can be achieved. Since the gate capacitance after the turn-on remains unchanged, an improvement in the cutoff frequency results. The numerical results demonstrating this effect are presented.

Published in:

Proceedings of the IEEE  (Volume:58 ,  Issue: 1 )