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Excellent immunity of GIDL to hot-electron stress in reoxidized nitrided gate oxide MOSFET's

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2 Author(s)
Joshi, A.B. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Dim-Lee Kwong

The authors present an investigation of the enhancement in gate-induced drain leakage (GIDL) caused by hot-electron stress in MOSFETs with control oxides, nitrided oxides, and reoxidized nitrided oxides as gate dielectrics. The contributions of interface state generation and electron trapping to GIDL enhancement in these MOSFETs were compared based on stress condition and stress time dependencies. Although no improvement resulted at large drain biases, under low drain voltage conditions, reoxidized nitrided oxides exhibited less GIDL enhancement under hot-electron stress than a nitrided oxide that was not reoxidized.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 1 )

Date of Publication:

Jan. 1992

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