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A microwave evaluation of the velocity-field characteristic in different regions of individual epitaxial gallium-arsenide layers

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1 Author(s)

The velocity (current)-electric field characteristic has been measured in different regions of individual epitaxial gallium-arsenide wafers by a high-power microwave technique. Epitaxial-n layers on semi-insulating substrates ranging in resistivity from approximately 0.5 to 5 Ω cm have been characterized. Trends in high-field microwave properties with normally specified low-field dc material properties are indicated.

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Proceedings of the IEEE  (Volume:57 ,  Issue: 7 )