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A high-speed eight-channel optoelectronic integrated receiver array comprising GaInAs p-i-n PD's and AlInAs/GaInAs HEMTs

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4 Author(s)
Yano, H. ; Sumitomo Electric Industries Ltd., Yokohama, Japan ; Murata, Michio ; Sasaki, Goro ; Hayashi, H.

The successful fabrication of an eight-channel optoelectronic integrated receiver array on an InP substrate, which comprises eighty elements including GaInAs p-i-n photodiodes (PDs) and AlInAs/GaInAs HEMTs, is reported. An average bandwidth of 1.2 GHz with a standard deviation of 190 MHz over the whole channel was obtained. An average responsivity was 546 V/W with a standard deviation of only 19.2 V/W. A crosstalk was less than -30 dB at frequencies between 3 and 900 MHz and as small as -28 dB even at 1 GHz. The yield of chips available for 1.0 Gb/s operation was as high as 62.5% over 2-in-diameter wafer

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Lightwave Technology, Journal of  (Volume:10 ,  Issue: 7 )