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Physical modeling of the step recovery diode for pulse and harmonic generation circuits

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2 Author(s)
J. L. Moll ; Stanford Electronics Laboratory, Stanford, Calfi. ; S. A. Hamilton

A simple charge-controlled switching model describes most fundamental aspects of the step recovery diode. However, it is shown that switching speed and the associated loss are related to the width of the i layer and to the doping level. A switching model appropriate for general computer use is given, and examples of its application are shown in pulse and harmonic generator circuits.

Published in:

Proceedings of the IEEE  (Volume:57 ,  Issue: 7 )