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High power semiconductor laser injection-locking at 1.3 μm

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4 Author(s)
Andrekson, P.A. ; AT&T Bell Lab., Murray Hill, NJ, USA ; Olsson, N.A. ; Tanbun-Ek, T. ; Washington, M.A.

The injection-locking properties of a high power antireflection coated 1.3-μm slave laser subjected to relatively low injection powers from a distributed feedback (DFB) laser and from a tunable external cavity laser have been investigated. Narrow linewidth operation (~40 kHz) was demonstrated and the tuning range within two slave modes (~10 GHz) and over the gain profile (~40 nm) was investigated. In addition, the tracking properties of the slave laser for both frequency and phase modulated injected light was evaluated at 1 Gb/s, in which the fidelity was judged from bit-error-rate measurements. The maximum locked power under 1 Gb/s frequency modulation was about 145 mW, limited by the available master power; approximately 300 μW was injected into the slave

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Lightwave Technology, Journal of  (Volume:10 ,  Issue: 7 )