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Electrooptic effect in CdTe at 23.35 and 27.95 microns

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1 Author(s)

The unlamped electrooptic coefficient r41of high-purity CdTe has been measured at 23.35 and 27.95 micros in the far infrared. The values obtained for n03r41are 9.4 × 10-11m/V at 23.35 µ and 8.1 × 10-11m/V at 27.95 µ. Using previously reported values for n0, the electrooptic coefficients are found to be 5.5 × 10-12m/V at 23.35 µ and 5.0 × 10-12m/V at 27.95 µ. These measurements extend the region of observed electrooptic effect from 16 µ, previously obtained using GaAs, to 28 µ using CdTe.

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Proceedings of the IEEE  (Volume:56 ,  Issue: 10 )