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Simulation of charge transfer in GaAs Cermet-Gate CCDs

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2 Author(s)
Pennathur, S. ; Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada ; Kwok, H.H.L.

Computer simulations of charge transport in GaAs cermet-gate CCDs are discussed. A finite difference scheme is used to simulate charge evolution between successive clock phases. Epi-grown and ion-implanted channels are considered. It is shown that charge transport and hence the transfer inefficiencies of these devices depend on the relative importance of the drift field and the self-induced field more than the diffusion contribution. The one-dimensional scheme used for the simulation of charge transfer is simple and computationally less intensive than a rigorous two-dimensional approach, but is qualitatively as effective

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:11 ,  Issue: 7 )