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Effect of uniform stress on Si p-n junctions

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3 Author(s)

A new method is described for produchrg large stress levels in semiconductor devices. The relative change in breakdown voltage induced by uniaxial stress σ was found to be (ΔV/VB)/σ≃-0.48 × 10-12, where stress is given in dynes/cm2. Experimental results are compared with the energy band model for the piezojunction effect.

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Proceedings of the IEEE  (Volume:56 ,  Issue: 7 )