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Crossed-field, free carrier, far infrared modulation in germanium

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2 Author(s)

We report the first observation of crossed-field, free carrier, far infrared modulation in near intrinsic, room temperature, single-crystal germanium. A modulation efficiency of one percent was obtained in the 8- to 14-µ region when the sample was placed in a static magnetic field of 3000 gauss and an alternating electric field of 3 V/cm.

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Proceedings of the IEEE  (Volume:56 ,  Issue: 3 )