Cart (Loading....) | Create Account
Close category search window
 

Crossed-field, free carrier, far infrared modulation in germanium

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

We report the first observation of crossed-field, free carrier, far infrared modulation in near intrinsic, room temperature, single-crystal germanium. A modulation efficiency of one percent was obtained in the 8- to 14-µ region when the sample was placed in a static magnetic field of 3000 gauss and an alternating electric field of 3 V/cm.

Published in:

Proceedings of the IEEE  (Volume:56 ,  Issue: 3 )

Date of Publication:

March 1968

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.