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Zero gate leakage current in the enhancement mode MOSFET

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1 Author(s)
Negro, V.C. ; U.S. Atomic Energy Commission, New York, N.Y.

Gate leakage current measurements of the enhancement mode MOSFET taken with a vibrating reed electrometer in a carefully controlled environment indicate that zero gate leakage current can be achieved. The zero region is delineated by the change of sign in the gate leakage current when the drain-to-source voltage is increased.

Published in:

Proceedings of the IEEE  (Volume:56 ,  Issue: 2 )