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Schottky contacts on n-In0.53Ga0.47As with enhanced barriers by counter-doped interfacial layers

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4 Author(s)
Kordos, P. ; Inst. fuer Schicht- und Ionentechnik, Forschungszentrum Julich, Germany ; Marso, M. ; Meyer, R. ; Luth, H.

The authors report the preparation and properties of Schottky contacts on n-InGaAs structures. The barrier height is enhanced by counter-doped p+-InGaAs layers (zinc-doped, NA =8×1018 cm-3, d=30 and 60 nm), situated between an n-InGaAs active layer and a barrier metal. Schottky diodes exhibit low reverse current densities, JR =5×10-6 A/cm2, the ideality factor is near unity, n=1.12, and effective barrier heights are 0.66-0.68 eV

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 8 )

Date of Publication:

Aug 1992

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