Cart (Loading....) | Create Account
Close category search window
 

Schottky contacts on n-In0.53Ga0.47As with enhanced barriers by counter-doped interfacial layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kordos, P. ; Inst. fuer Schicht- und Ionentechnik, Forschungszentrum Julich, Germany ; Marso, M. ; Meyer, R. ; Luth, H.

The authors report the preparation and properties of Schottky contacts on n-InGaAs structures. The barrier height is enhanced by counter-doped p+-InGaAs layers (zinc-doped, NA =8×1018 cm-3, d=30 and 60 nm), situated between an n-InGaAs active layer and a barrier metal. Schottky diodes exhibit low reverse current densities, JR =5×10-6 A/cm2, the ideality factor is near unity, n=1.12, and effective barrier heights are 0.66-0.68 eV

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 8 )

Date of Publication:

Aug 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.