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The minority carrier injection controlled field-effect transistor (MICFET): a new MOS-gated power transistor structure

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4 Author(s)
Ajit, J.S. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Baliga, B.J. ; Tandon, S. ; Reisman, A.

A description is given of a power device structure, the minority carrier injection controlled field-effect transistor (MICFET), in which a floating p region coupled to the drain via a MOSFET is used to inject minority carriers (holes) into the JFET and upper drift region of the DMOSFET to modulate the conductivity of the device during the on-state. The results of device modeling, two-dimensional numerical simulation, and measurements performed on 500-V devices indicate a 30% improvement in on-state current density over the DMOSFET with comparable turn-off times

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 8 )

Date of Publication:

Aug 1992

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