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Physical characterization of hot-electron-induced MOSFET degradation through an improved approach to the charge-pumping technique

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2 Author(s)
C. Bergonzoni ; SGS-Thomson Microelectronics, Agrate Brianza, Italy ; G. D. Libera

The physical mechanisms which are involved in the hot-carrier-induced degradation of CMOS transistor are analyzed by means of an improved approach to the charge-pumping measurement technique. The proposed experimental procedure allows the simultaneous characterization of both interface-states generation and carrier trapping in the gate insulator. The analysis is extended to both static and dynamic degradation processes, whose differences and similarities are discussed

Published in:

IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 8 )