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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:39 Issue:8 Help

A new self-alignment technology using bridged base electrode for small-scaled AlGaAs/GaAs HBT's

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5 Author(s)
Nagata, K. ; NTT LSI Lab., Kanagawa, Japan ; Nakajima, O. ; Nittono, Takumi ; Yamauchi, Y.
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The fabrication and characterization of a new self-aligned HBT utilizing bridged base-electrode technology (BBT) are presented. This new technology simplifies the fabrication process and relaxes the limitations in device size scaling, thus decreasing the emitter size to 1 μm×1 μm. In spite of a large junction periphery area ratio, a good current gain of more than 10 is obtained in an HBT with an emitter size of 1 μm×1 μm. A series of fabricated HBTs shows excellent high-speed performance. The highest values of fT =90 GHz and fmax=63 GHz are obtained in an HBT with an emitter size of 1 μm×5 μm. The realization of HBTs with small emitters and excellent high-frequency characteristics demonstrates the effectiveness of this new technology

Published in:
Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 8 )

Date of Publication: Aug 1992

Page(s):
1786 - 1792
ISSN :
0018-9383
INSPEC Accession Number:
4241322
Digital Object Identifier :
10.1109/16.144665
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Aug 1992
Sponsored by :
IEEE Electron Devices Society

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