Cart (Loading....) | Create Account
Close category search window
 

A novel method of semiconductor device measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Everhart, T.E. ; University of California, Berkeley, Calif. ; Wells, O.C. ; Matta, R.K.

Electrical signals induced in semiconductor devices by a high-resolution scanning electron beam have been used to determine the boundaries of doped (p or n) regions, even when these boundaries lie beneath passivating oxide layers, or beneath evaporated metal leads. The uniformity of planar junctions lying beneath the device surface can also be ascertained by this method, and the junction depth can be estimated by comparing measurements made at different electron-beam voltages. The spatial resolution of this technique is limited by the penetration and scattering of electrons in the device material; these scattering effects are discussed, and representative micrographs showing resolutions of a few microns are presented, as well as various quantitative measurements related to the method.

Published in:

Proceedings of the IEEE  (Volume:52 ,  Issue: 12 )

Date of Publication:

Dec. 1964

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.