Continuous stimulated emission from GaAs diodes at 77°K

A study was undertaken for preparing low threshold GaAs laser materials. Optimum results were obtained by using boat grown GaAs (Te doped with an electron concentration of 1-2 xlO
¹⁸
cm
^-3
). Extremely planar junctions resulted from diffusing Zn out of ZnAs2 source into the n-type substrates at 85O°C for 24 hours. Large area contacts giving uniform current distribution were found essential for low thresholds.