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Very low threshold 780 nm AlGaAs SDH lasers on p-type GaAs substrate fabricated using single-step MOCVD

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4 Author(s)
H. Narui ; Sony Corp. Res. Center, Yokohama, Japan ; M. Doi ; O. Matsuda ; Y. Mori

A separated-double-heterostructure (SDH) laser on a p-type substrate with a pnp current blocking layer was fabricated using single-step MOCVD. A threshold current of 4.5 mA was obtained at room temperature under CW operation, and the linearity of the light output power/current curve was improved in comparison with that of an SDH laser on an n-type GaAs substrate.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 13 )