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Browse Journals & Magazines > Electronics Letters ...> Volume:28 Issue:13 Help

Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology

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8 Author(s)
Wennekers, P. ; Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany ; Bosch, R. ; Reinert, W. ; Huelsmann, A.
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A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0.3 mu m gate lengths. In amplifier mode with unmatched input and single ended output the chip exhibits 30 dB gain and 6.5 GHz bandwidth. Matching extends the bandwidth to 9.0 GHz. In mixer mode at 12 GHz input frequency and 1.5 GHz IF frequency the chip shows 11.5 dB conversion gain. The chip has a power dissipation of 125 mW at a supply voltage of 3.50 V.

Published in:
Electronics Letters  (Volume:28 ,  Issue: 13 )

Date of Publication: 18 June 1992

Page(s):
1241 - 1243
ISSN :
0013-5194
INSPEC Accession Number:
4215356
Digital Object Identifier :
10.1049/el:19920784
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
18 June 1992
Sponsored by :
Institution of Engineering and Technology

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