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DC characteristics and stability behaviour of high-speed Si/SiGe HBTs with undoped SiGe spacer between base and collector

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2 Author(s)
H. -U. Schreiber ; Ruhr Univ. Bochum, Germany ; J. N. Albers

The quality of MBE-grown Si/SiGe heterojunction bipolar transistors (HBTs) was improved by inserting a well-defined undoped SiGe layer between the neutral base and the collector. The DC characteristics and the long-term stability of these non-selfaligned devices proved to be excellent, and the transit frequency reached 33 GHz (VCB=1 V). Those features are essential preconditions for future application in high-speed ICs.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 13 )