By Topic

Nitridized InAs/GaAs self-assembled quantum dots for optical communication wavelength

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kita, T. ; Fac. of Eng., Kobe Univ., Japan ; Masuda, Y. ; Seki, H. ; Mori, T.
more authors

A technique to grow InAs quantum dot (QD) to extend the emission wavelength into optical communication range has been developed. We performed nitridation after growing InAs QDs by molecular-beam epitaxy. The nitridized InAs QDs show a remarkable red shift of the photoluminescence peak. We have confirmed a 1.3μm emission peak at room temperature.

Published in:

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

Date of Conference:

31 May-4 June 2004