By Topic

In-depth and in-plane characterization of buried semiconductor heterostructures by cathodoluminescence in-depth spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Fumitaro, I. ; Res. Center for Integrated Quantum Electron. & Graduate Sch. of Electron. & Information Eng., Hokkaido Univ., Sapporo, Japan ; Oikawa, T. ; Hashizume, Tamotsu ; Hasegawa, Hideki

The cathodoluminescence in-depth spectroscopy (CLIS) technique is applied to GaN-based and GaAs-based structures as a new method of non-destructive in-depth and in-plane characterization. Here, a plot of CL intensity vs. acceleration voltage is defined as the CLIS spectrum, and it is analyzed on computer. Detailed recombination dynamics for band edge emission and yellow luminescence in GaN and AlGaN/GaN materials was clarified by comparing experimental and theoretical CLIS spectra. The method was also successfully applied to in-depth and in-plane characterization of an AlGaAs/GaAs three-dimensionally inter-crossing quantum wire structure, giving information on geometry and alloy composition.

Published in:

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

Date of Conference:

31 May-4 June 2004