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Photoluminescence characterization of InGaAs/AlGaAs strained-quantum well active layer on GaAs substrate with 1.05-1.06-μm wavelength composition under high-power 920-nm-laser excitation

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2 Author(s)
Nakao, M. ; NTT Photonics Lab., Atsugi, Japan ; Yuda, M.

We have measured photoluminescence (PL) of epitaxial wafers with an InGaAs/AlGaAs strained-quantum well structure (s-QW) for 1.02-1.06-μm wavelength semiconductor laser under irradiation of a high-power laser diodes (LDs) emitting at around 920 nm. The s-QW layer can be selectively excited by the 920-nm-LD through GaAs and AlGaAs layers. We observed the PL spectra clearly from 1.0 μm by using a thin Si-plate as a cut filter to reduce the scattered light from the 920-nm-LD. When we excite from the cleaved facet side, the obtained PL data have good correlation with characteristics of the laser diode having the same s-QW active layer. By using developed method we can expect laser characteristics before its fabrication.

Published in:

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

Date of Conference:

31 May-4 June 2004