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Static characteristics of an InAlGaAs quantum well monolithically integrated DBR laser and electroabsorption modulator fabricated by quantum well intermixing

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5 Author(s)
Robert, F. ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; Brycc, A.C. ; Marsh, J.H. ; SpringThorpe, A.J.
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We report on the operation of a monolithically integrated DBR laser electroabsorption modulator fabricated in 1.3 μm InAlGaAs strained multiple quantum well structure. The device encompasses three sections of different bandgaps obtained by a two step annealing-sputtering quantum well intermixing process.

Published in:

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

Date of Conference:

31 May-4 June 2004