Referenced Items are not available for this document.
Implantation-induced electrical isolation is a well known method in III-V semiconductor technology for the creation of local high resistivity regions in electronic and optoelectronic devices. In this paper, we demonstrate for the first time the fabrication of low leakage current (nA) planar vertical PIN modulators and detectors directly from epitaxial material using multiple energy Fe+ implant isolation in intentionally doped p- and n-type InP, and intrinsic multiple quantum well (MQW) InGaAsP layers.
Published in:
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Date of Conference: 31 May-4 June 2004
- Page(s):
- 362 - 365
- ISSN :
- 1092-8669
- Print ISBN:
- 0-7803-8595-0
- INSPEC Accession Number:
- 8412660
- Digital Object Identifier :
- 10.1109/ICIPRM.2004.1442730
- Product Type:
- Conference Publications
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