Cart (Loading....) | Create Account
Close category search window
 

Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)

The production of InP-based epiwafers on GaAs substrates by molecular beam epitaxy is achieved through the use of metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP layers. Each M-buffer demonstrates a unique surface morphology and strain relaxation mechanism, as demonstrated by AFM, SEM, and TEM. HEMTs and HBTs were grown on GaAs substrates using the two M-buffers, and their transport properties and dc parameters were compared with baseline structures grown on InP substrates. The structures grown with the InAlAs M-buffer were much closer to the baseline than those grown using the InP M-buffer. Incomplete dislocation filtering in the InP M-buffer may be the source of this degradation.

Published in:

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

Date of Conference:

31 May-4 June 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.