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Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix

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2 Author(s)
Liu, Wei-Sheng ; Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan ; Jen-Inn Chyi

The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 μm can thus be obtained.

Published in:

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

Date of Conference:

31 May-4 June 2004