By Topic

Integrated DFB laser electro-absorption modulator based on identical MQW-double stack active layer for high-speed modulation beyond 10 Gbit/s

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Saravanan, B.K. ; Corp. Res. Photonics, Infineon Technol. AG, Munich, Germany ; Gerlach, P. ; Peschke, M. ; Knoedl, T.
more authors

Integrated DFBLD-EAM-SOA devices utilizing an identical MQW active region have been realized in the AlGaInAs/InP material system. A fiber-coupled optical power of >6 mW with a 10 dB static extinction, 44 dB SMSR single-mode spectrum and a 3 dBe cutoff frequency of 25 GHz was measured.

Published in:

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

Date of Conference:

31 May-4 June 2004