Extracting of silicon carbide schottky diode model parameters using lateral optimization method including the parallel conductance

In this study, A nonlinear least squares optimization algorithm is used for extracting Silicon carbide Schottky parameters of the single model is presented Parameters values were extracted using this method from experimental characteristics collected .from Tungsten (W), Nickel (Nt) and Molybdenum (Mo) Schottky on 4H-SiC under forward and reverse bias and at different temperatures. The method is found to be reliable and accurate in situations where the model is a good approximation of Schottky diode performance. The diodes showed a barrier height of ϕ
_b
= 1.013eV for Mo and ϕ
_b
= 1.15 eV for Wand ϕ
_b
= 1.57 eV for Ni. The diodes showed also a series resistance in the range of 6 Ω to 15 Ω and a shunt conductance in the range of 10
^-12
S to 10
^-11
S The ideality factor is close to unity. Indications are given on the validity of the used technique and its main limitations.