By Topic

Influence of doping density on small- and large-signal characteristics of AlGaN/GaN/SiC HEMTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

The small signal S-parameter and load pull measurements on AIGaN/GaN HEMTs with different doping densities are reported. The cut-off frequencies ft and fmax of 38 and 67 GHz respectively, and the maximal output powers of 4.9 and 3.8 W/mm at 2 and 7 GHz respectively, were achiel'ed. The parameter extraction from small signal S-parameters shows an increase of gate-source capacitance and transconductance with the doping concentration and hence its influence on small signal (ft and fmax) and power performance.

Published in:

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Date of Conference:

17-21 Oct. 2004